背部偏见的包装进展(SE, SG, SH, and SJ versus SA and SB)
背部偏见的包装进展(SE, SG, SH, and SJ versus SA and SB)
By Daniel Dwyer, Allegro MicroSystems, LLC
抽象的
In addition to advancements made in Hall sensor IC technology over the last decade, Allegro™ MicroSystems has also produced significant packaging advancements in back-biased devices. Magnetic circuit elements and the use of high temperature materials have resulted in lower total system costs for manufacturers using them in final sensor module products. Innovative package design and assembly technology have produced smaller, more powerful devices.
SA和SB包装
Allegro的SA和SB代表第一代背部偏置包。SA和Sb由机械组装的部件组成,其超声焊接到成品包装中。模塑霍尔效应IC提供了系统的大脑,极靴和稀土颗粒增强了磁路,而壳体和端盖提供包装壳。
SA和SB只有其尺寸;SB长7毫米,而SA长度为9毫米。较大的SA主要用于单元素霍尔效应装置,其需要比差分装置更大,更复杂的磁体系统。
图1. Exploded View of SA Differential Package.
SE,SG,SH和SJ套餐
Like the SA and SB, the newer SE, SG, SH, and SJ packages possess all of the required elements for a gear tooth sensing IC. Unlike the SA and SB, the functional components of the new packages are assembled and then molded in a single step. Refer to figure 2 to see the cross section of the SB package and figure 3 to see the cross section of the SG package. The SG package cross section is also representative of the SE, SH, and SJ. The SE accomodates the larger, specially designed rare-earth pellet for TPO (True Power On) and proximity sensing, while the smaller SG, SH and SJ packages accept the differential pellets used for speed and direction sensing.
图2. SB包横截面。
图3.. SG Package Cross-Section.
SE,SG,SH和SJ Leadframes
这四个包装具有相同的制造过程和封装尺寸,它们确实具有明显不同的引线框架。SE,SG和SJ有四个引线,并与开放电池,3线装置一起使用,而SH有两个宽的引线,用于2线装置。SH的两个引线比SG的两个引线宽,以便于焊接或焊接。SE和SJ具有比SH更窄的引线,但它们被涂抹以方便焊接和焊接。
SG | SH. | SJ. | SE. |
图4.高级包的等距视图。 |
在所有四个封装中,引线已经大小并间隔开,使得将它们抵靠封装不会增加包装壳体包络的外径。
在发货期间,将热塑性铅杆模制在引线端到端控制铅共面和直线度。
包装背面的模制特征可促进后续组装步骤期间的取向和位置。请参阅图5。
Figure 5. SG Package Isometric Showing Features on Reverse Side.
SE,SG,SH和SJ包优势
专利的Allegro SE,SG,SH和SJ封装允许稀土颗粒在第一代封装中靠近IC(参见图2和3)。该几何优势允许该装置满足大的气隙性能,其颗粒比标准包装中的颗粒较小。由此产生的小包装适合今天的齿轮齿传感应用的紧密间距。亚博尊贵会员
组装在SA和SB中所需的间隙导致整个包装内部的空隙(参见图1)。由于SE,SG,SH和SJ没有这种空隙,因此散热得到改善,并且消除了在随后的灌封操作期间发生的空气截留。
通过SE,SG,SH和SJ封装中存在的减少的导热路径来实现散热的进一步改善。由于单步模塑过程,消除了IC在IC的引线框架和颗粒之间通常看到的塑料层。增加的导热性通过颗粒表示更大的散热能力,允许在较高的环境温度下进行操作。请参阅图3。
SE., SG, SH, and SJ Solution Advantages
- Small Package Size
单步热固性成型允许磁性效率提高和降低颗粒尺寸的紧密颗粒/ IC接近。单步热固性成型步骤还允许较薄的墙壁,并导致较小的封装尺寸。 - 简单的系统实现
带有优化颗粒的后偏置封装在小型稳健的包装中需要最小的磁路设计专业知识。 - High Temperature Operation
用于改进的散热的单一步骤热固性模制在升高的温度下提供操作。 - Robust Post-Processing
Single step molding eliminates voids and precludes the generation of air bubbles during potting or overmolding. - Easy Lead Soldering and Welding
The optimized lead configurations of the SE, SH, and SJ packages provide for simple soldering and welding.
包裹Matrix Table |
||||||||
---|---|---|---|---|---|---|---|---|
包裹 |
制造 |
大厅IC类型 |
界面 |
Case Diameter |
案例深度 |
|||
Mechanical |
塑造 |
Single |
Differential |
3线 |
2线 |
|||
SA |
X |
X |
X |
X |
9. |
9. |
||
SB. |
X |
X |
X |
X |
X |
9. |
7. |
|
SE. |
X |
X |
X |
10. |
7. |
|||
SG |
X |
X |
X |
8. |
5.5 |
|||
SH. |
X |
X |
X |
8. |
5.5 |
|||
SJ. |
X |
X |
X |
8. |
5.5 |